Cleaning compositions for removing etching residue and method of using
US5334332A · kind A · utility
150Cited by
15References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 9, 1992 |
| Grant date | Aug 2, 1994 |
| Priority date | — |
| Expiry date | Jul 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.