Microwave energized process for the preparation of high quality semiconductor material
US5334423A · kind A · utility
3Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1993 |
| Grant date | Aug 2, 1994 |
| Priority date | — |
| Expiry date | Jan 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32697
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.