Semiconductor cold electron emission device
US5334853A · kind A · utility
2Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1993 |
| Grant date | Aug 2, 1994 |
| Priority date | — |
| Expiry date | Sep 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/308
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor cold electron emission device comprising a type I heterojunction formed of a P-type semiconductor mixture of AlN and a N-type semiconductor mixture of SiC which junction is forward biased so that electrons are monoenergetically emitted from the P-type semiconductor mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.