High dielectric constant capacitor and method of manufacture
US5335138A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1993 |
| Grant date | Aug 2, 1994 |
| Priority date | — |
| Expiry date | Feb 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
A high storage capacity capacitor for a semiconductor structure includes a barrier layer formed on a polysilicon electrode, a lower electrode, a dielectric layer, and an upper electrode. The dielectric material is formed of a high dielectric constant material such as BaSrTiO.sub.3. In order to protect the barrier layer from oxidation during deposition of the dielectric layer and to provide a smooth surface geometry for depositing the dielectric layer, conducting or insulating spacers are formed on the sidewalls of the barrier layer and lower electrode. A smooth dielectric layer can thus be formed that is less susceptible to current leakage. In addition, the insulating spacers can be formed to completely fill a space between adjacent capacitors and to provide a completely planar surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.