Method of chucking semiconductor wafers
US5335457A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1992 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Oct 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of chucking semiconductor wafers, in which a silicone elastic layer with high flatness is formed on the surface of a hard substrate having fine through-holes for vacuum chucking. Next fine through-holes in the silicone elastic layer, are provided, each through-hole communicating with the fine through-holes of the hard substrate. Next a semi-conductor wafer is held on the hard substrate by vacuum chucking from the back side of the substrate, so as to hold the semiconductor wafer securely on the substrate only by surface adhesion of the silicone elastic layer during polishing of the wafer. This method does not require wax or similar adhesive for holding the semiconductor wafer on the hard surface during the polishing process, and can realize a high-precision and high-quality surface polishing process for the semiconductor wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.