Low temperature dry etch of copper
US5336363A · kind A · utility
14Cited by
5References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1993 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Sep 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Copper lines can be formed on a semiconductor wafer at low temperatures by forming a patterned photoresist layer over a copper layer, and etching the copper in a vacuum etch chamber using vaporized acetic acid and water as the etchants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.