Process for manufacturing semiconductor devices
US5336638A · kind A · utility
115Cited by
10References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1992 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Mar 6, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/117
Abstract
Herein disclosed is a process for manufacturing a semiconductor device, which comprises: a step of forming a first electrode composed of tantalum and tungsten over a semiconductor substrate; a step of depositing a dielectric film of tantalum oxide on the first electrode; a step of oxidizing the first electrode and the dielectric film of tantalum oxide; and a step of forming a second electrode over the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.