Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures
US5336903A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1993 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | May 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/059
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substrate. The doped silicon-germanium alloy acts as a diffusion source for the dopant, so that shallow doped, regions may be formed at the face of the semiconductor substrate without ion implantation. A high performance contact to the doped region is also provided by forming a metal layer on the doped silicon-germanium alloy layer and heating to react at least part of the silicon-germanium alloy layer with at least part of the metal layer to form a layer of germanosilicide alloy over the doped regions. The method of the present invention is particularly suitable for forming shallow source and drain regions for a field effect transistor, and self-aligned source and drain contacts therefor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.