Buried avalanche diode having laterally adjacent semiconductor layers
US5336920A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 1993 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Mar 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
Abstract
An avalanche diode structure incorporated in an integrated circuit is embodied by the lateral junction between two adjacent buried layers having opposite conductivity types and a high doping level. This diode includes: a first highly doped buried layer of the same first conductivity type as the integrated circuit substrate; a second highly doped buried layer of the second conductivity type, surrounding the first buried layer and laterally contacting the first layer; and a third low doped buried layer of the second conductivity type disposed beneath the first buried layer and overlapping with respect to the second layer so as to also contact a portion of the second buried layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.