High-permittivity dielectric capacitor for use in a semiconductor device and process for making the same
US5337207A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1992 |
| Grant date | Aug 9, 1994 |
| Priority date | — |
| Expiry date | Dec 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G7/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-permittivity dielectric capacitor (28) having a refractory-metal oxide layer (16) framing the first electrode (14) of the capacitor (28) and separating a high-permittivity dielectric layer (24) from an insulating layer (12) underlying the capacitor (28). The high-permittivity dielectric layer (16) makes contact with the first electrode (14) through an opening (18) in the refractory-metal oxide layer (16). The refractory-metal oxide layer (16) separates the high-permittivity dielectric layer (24) from the insulating layer (12) in all regions away from the opening (18) in the refractory-metal oxide layer (16). During fabrication of the capacitor (28), when the high-permittivity dielectric layer (24) is patterned, the refractory-metal oxide layer (16) provides an etch-stop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.