High power MOSFET with low on-resistance and high breakdown voltage
US5338961A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Feb 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a relatively high resistivity epitaxially formed region which is deposited on a high conductivity substrate. The drain electrode may be either on the opposite surface of the chip or laterally displaced from and on the same side as the source regions. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without effecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.