RF power transistor package
US5338974A · kind A · utility
10Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Mar 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF power transistor is mounted on a ceramic substrate with a plurality of input leads extending from one edge of the substrate, a plurality of output leads extending from an opposite edge of the substrate, a plurality of input ground leads with ground leads positioned between adjacent input leads, and a plurality of output ground leads with ground lead positioned between adjacent output leads. All ground leads are ohmically connected with the current paths between adjacent ground leads reduced in length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.