Patent · US Expired

Langmuir probe system for radio frequency excited plasma processing system

US5339039A · kind A · utility

23Cited by
4References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 29, 1992
Grant dateAug 16, 1994
Priority date
Expiry dateSep 29, 2012

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32935
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A Langmuir probe system for measuring plasma internal discharge parameters in a radio frequency excited plasma processing system includes an electrically tuned resonant circuit. The electrically tuned resonant circuit includes a semiconductor variable capacitor. Specifically, an inductor and FET are connected in parallel to form a resonant circuit used to electrically tune the Langmuir probe. The tuning circuit is placed within a moveable, electrically floating, probe housing and is electrically tuned to improve tuning accuracy and to reduce detuning during operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.