Reflector for semiconductor laser end-face and method of manufacturing the same
US5339326A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Aug 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a reflector for a semiconductor device which oscillates in the region from the near infrared region to the visible and short wavelength region, and a method of manufacturing the reflector. With an RF magnetron sputtering apparatus, a dielectric reflector of deposited films is formed on an end-face of a ZnSe semiconductor laser device. The deposited films are formed by 3 repetitions of alternately depositing an SiO.sub.2 film and a TiO.sub.2 film which each has an optical thickness of a quarter of the oscillating wavelength of the semiconductor laser device such that a reflectance at the oscillating wavelength of the laser device is over 90%. The dielectric reflector improves current--light output characteristics of the laser device compared to a conventional semiconductor laser device provided with no dielectric reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.