Ayumu Tsujimura
24Patents
10h-index
29Co-inventors
75Inventor score
Filing activity: Aug 30, 1993 → Dec 12, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5499260A | Semiconductor laser and a method for fabricating the same | Electricity | 67 | Expired |
| US6614059B1 | Semiconductor light-emitting device with quantum well | Electricity | 60 | Expired |
| US6720586B1 | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same | Electricity | 46 | Expired |
| US6030849A | Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate | Electricity | 43 | Expired |
| US6392979B1 | Optical pickup and optical disk apparatus using the same | Electricity | 31 | Expired |
| US5339326A | Reflector for semiconductor laser end-face and method of manufacturing the same | Electricity | 18 | Expired |
| US6466597B1 | Semiconductor laser device | Electricity | 18 | Expired |
| US6911351B2 | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same | Electricity | 12 | Expired |
| US6858877B2 | Nitride semiconductor, method for manufacturing the same and nitride semiconductor device | Electricity | 10 | Expired |
| US6777253B2 | Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device | Electricity | 10 | Expired |
| US6611005B2 | Method for producing semiconductor and semiconductor laser device | Electricity | 9 | Expired |
| US6586774B2 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device | Electricity | 9 | Expired |
| US6324200A | Semiconductor laser device | Electricity | 9 | Expired |
| US6764871B2 | Method for fabricating a nitride semiconductor device | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6072762A | Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations | Physics | 8 | Expired |
| US6562129B2 | Formation method for semiconductor layer | Electricity | 8 | Expired |
| US6265287A | Method for producing semiconductor layer for a semiconductor laser device | Electricity | 8 | Expired |
| US7160748B2 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device | Electricity | 8 | Expired |
| US5817410A | Nonlinear optical composites using linear transparent substances and method for producing the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6940100B2 | Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer | Electricity | 7 | Expired |
| US5663974A | Semiconductor laser | Electricity | 5 | Expired |
| US6921678B2 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device | Electricity | 1 | Expired |
| US9563403B2 | Random number generating device | Electricity | 0 | Active |
| US7108745B2 | Formation method for semiconductor layer | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.