Process and apparatus for etching semiconductor wafers
US5340437A · kind A · utility
49Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Oct 8, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for etching a semiconductor wafer which includes the steps of rotating the wafer, and contacting the rotating wafer with a flowing froth, the froth being formed, at least in part, by the effervescence of a pressurized etchant containing a dissolved gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.