MEMC Electronic Materials, Inc.
328Patents
70Active
328Granted
47Portfolio score
Filing activity: Aug 14, 1991 → Apr 25, 2012 · 54 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5518549A | Susceptor and baffle therefor | Electricity | 536 | Expired |
| US6330971A | Radio frequency identification system and method for tracking silicon wafers | Electricity | 107 | Expired |
| US5919302A | Low defect density vacancy dominated silicon | Emerging Cross-Sectional Technologies | 72 | Expired |
| US5976247A | Surface-treated crucibles for improved zero dislocation performance | Emerging Cross-Sectional Technologies | 70 | Expired |
| US5377451A | Wafer polishing apparatus and method | Performing Operations; Transporting | 69 | Expired |
| US5593494A | Precision controlled precipitation of oxygen in silicon | Electricity | 57 | Expired |
| US5605487A | Semiconductor wafer polishing appartus and method | Electricity | 57 | Expired |
| US5679055A | Automated wafer lapping system | Performing Operations; Transporting | 53 | Expired |
| US5571373A | Method of rough polishing semiconductor wafers to reduce surface roughness | Electricity | 52 | Expired |
| US5422316A | Semiconductor wafer polisher and method | Emerging Cross-Sectional Technologies | 52 | Expired |
| US5795381A | SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon | Physics | 50 | Expired |
| US5340437A | Process and apparatus for etching semiconductor wafers | Electricity | 49 | Expired |
| US5779791A | Process for controlling thermal history of Czochralski-grown silicon | Emerging Cross-Sectional Technologies | 47 | Expired |
| US5178720A | Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates | Chemistry; Metallurgy | 44 | Expired |
| US5653799A | Method for controlling growth of a silicon crystal | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6562123B2 | Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6236104A | Silicon on insulator structure from low defect density single crystal silicon | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6187089A | Tungsten doped crucible and method for preparing same | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6454635B1 | Method and apparatus for a wafer carrier having an insert | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5837662A | Post-lapping cleaning process for silicon wafers | Electricity | 35 | Expired |
| US6444027B1 | Modified susceptor for use in chemical vapor deposition process | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6709981B2 | Method and apparatus for processing a semiconductor wafer using novel final polishing method | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5980629A | Methods for improving zero dislocation yield of single crystals | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6515742B1 | Defect classification using scattered light intensities | Physics | 33 | Expired |
| US6093913A | Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections | Emerging Cross-Sectional Technologies | 33 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.