Multilayer magnetic structure wherein the magnitude of the structure magnetoresistance is a function of nonmagnetic layer thickness
US5341118A · kind A · utility
49Cited by
11References
31Claims
0Family size
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Key dates
| Filing date | May 6, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | May 6, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A multilayer magnetoresistive (MR) sensor formed on a substrate includes alternating layers of a ferromagnetic material and a non-magnetic metallic material. The ferromagnetic material and the non-magnetic material form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.