Variable wavelength semiconductor laser
US5341391A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 26, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Apr 26, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06256
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device has an active layer, a cladding layer, and a contact layer successively disposed on a semiconductor substrate. A pair of electrodes for passing a current parallel to the cladding and contact layers and perpendicular to the resonator direction of the active layer for heating the active layer are disposed opposite the stripe-shaped active layer. The pair of electrodes are disposed on the contact layer and the contact layer between the pair of electrodes is missing. One of the pair of electrodes may be disposed directly on the cladding layer. An improved wavelength change response property as a function of the active layer temperature controlling current flowing between the two electrodes is obtained. Further, the production of the laser is easy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.