Eitaro Ishimura
50Patents
8h-index
34Co-inventors
78Inventor score
Filing activity: Apr 26, 1993 → Apr 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5341391A | Variable wavelength semiconductor laser | Electricity | 57 | Expired |
| US5717710A | Optical semiconductor device | Electricity | 28 | Expired |
| US5602672A | Light modulator module and method for fabricating light modulator module | Electricity | 17 | Expired |
| US5521742A | Semiconductor optical modulator | Electricity | 15 | Expired |
| US5771257A | Light absorption modulator and integrated semiconductor laser and modulator | Electricity | 14 | Expired |
| US5880489A | Semiconductor photodetector | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5942771A | Semiconductor photodetector | Electricity | 10 | Expired |
| US7462889B2 | Avalanche photodiode | Electricity | 8 | Expired |
| US5528413A | Semiconductor light intensity modulator | Physics | 8 | Expired |
| US7259408B2 | Avalanche photodiode | Electricity | 8 | Expired |
| US7030477B2 | Optical semiconductor device | Electricity | 7 | Expired |
| US7187013B2 | Avalanche photodiode | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7020375B2 | Waveguide light detecting element | Electricity | 6 | Expired |
| US7038251B2 | Semiconductor device | Electricity | 5 | Expired |
| US7415185B2 | Buried-waveguide-type light receiving element and manufacturing method thereof | Electricity | 5 | Active |
| US6734519B1 | Waveguide photodiode | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5684307A | Semiconductor photodiode having the electrodes formed on the same surface | Electricity | 4 | Expired |
| US8655116B2 | Optical modulator | Physics | 4 | Active |
| US8526478B2 | Semiconductor optical integrated element | Electricity | 4 | Active |
| US7109523B2 | Package for optical semiconductor device | Electricity | 4 | Expired |
| US7031587B2 | Waveguide type photoreceptor device with particular thickness ratio | Physics | 3 | Expired |
| US8035181B2 | Semiconductor photodetector with improved quantum efficiency as a function of detected light wavelength | Emerging Cross-Sectional Technologies | 3 | Active |
| US8698268B2 | Avalanche photodiode and method for manufacturing the avalanche photodiode | Emerging Cross-Sectional Technologies | 3 | Active |
| US7928472B2 | Optical semiconductor device with a distributed Bragg reflector layer | Emerging Cross-Sectional Technologies | 3 | Active |
| US6021148A | Semiconductor laser device | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.