Ion implantation system
US5343047A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1993 |
| Grant date | Aug 30, 1994 |
| Priority date | — |
| Expiry date | Jun 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system for implanting ions into a semiconductor wafer includes an ion source device, a mass spectrometer, an accelerating tube and a process chamber arranged in this order. A rotating disk is arranged in the process chamber to support a plurality of wafers thereon. A Faraday cup is arranged in the process chamber, corresponding to an ion beam shooting position. The Faraday cup serves to shut up therein secondary electrons and ions generated from the wafer at the time of ion implantation for measuring the amount of ions implanted. A suppressor electrode is provided to suppress the flow-out of the secondary electrons from the Faraday cup. The suppressor electrode comprises a cylindrical body made of carbon and an SiC film formed on the inner face of the cylindrical body. The SiC film serves as a resistance of the electrode surface for preventing rapid discharge from being caused at the electrode surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.