Nonvolatile magnetoresistive storage device using spin valve effect
US5343422A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1993 |
| Grant date | Aug 30, 1994 |
| Priority date | — |
| Expiry date | Feb 23, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile magnetoresistive (MR) storage device comprising a plurality of MR storage elements, each comprising a substrate and a multilayered structure including two thin film layers of ferromagnetic material separated by a thin layer of nonmagnetic metallic conducting material. The magnetization easy axis of both ferromagnetic layers in each storage element is oriented substantially lengthwise of the storage elements and substantially parallel to the direction of an applied sense current. The magnetization direction of one of the ferromagnetic layers is fixed in a direction substantially lengthwise of the storage elements, and the magnetization direction of the other layer is free to switch between two digital states in which the magnetization is substantially parallel or substantially antiparallel to the magnetization direction in the one layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.