Inventor · San Jose, CA, US

Po-Kang Wang

151Patents
27h-index
98Co-inventors
93Inventor score

Filing activity: Dec 21, 1988 → Apr 18, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US5018037A Magnetoresistive read transducer having hard magnetic bias Physics 150 Expired
US5343422A Nonvolatile magnetoresistive storage device using spin valve effect Physics 99 Expired
US9466319B1 Perpendicular magnetic recording (PMR) write shield design with minimized wide adjacent track erasure (WATE) Physics 80 Active
US5768055A Magnetic recording head having a carbon overcoat array on slider air bearings surfaces Emerging Cross-Sectional Technologies 78 Expired
US5005096A Magnetoresistive read transducer having hard magnetic shunt bias Physics 64 Expired
US5508867A Magnetoresistive sensor with flux keepered spin valve configuration Physics 62 Expired
US5283942A Sacrificial layer planarization process for fabricating a narrow thin film inductive head Emerging Cross-Sectional Technologies 59 Expired
US5079663A Magnetoresistive sensor with track following capability Physics 57 Expired
US5079035A Method of making a magnetoresistive read transducer having hard magnetic bias Emerging Cross-Sectional Technologies 56 Expired
US7852662B2 Spin-torque MRAM: spin-RAM, array Physics 54 Active
US7064928B2 Method and apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head Emerging Cross-Sectional Technologies 54 Expired
US8138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM Electricity 53 Active
US7105372B2 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy Electricity 51 Expired
US5452165A Close packed magnetic head linear array Physics 50 Expired
US7391594B2 Apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head Emerging Cross-Sectional Technologies 45 Active
US5285339A Magnetoresistive read transducer having improved bias profile Physics 43 Expired
US5664316A Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer Emerging Cross-Sectional Technologies 42 Expired
US6943040B2 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling Electricity 35 Expired
US6103136A Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) Emerging Cross-Sectional Technologies 35 Expired
US7345911B2 Multi-state thermally assisted storage Physics 33 Expired
US7486545B2 Thermally assisted integrated MRAM design and process for its manufacture Physics 32 Expired
US5073833A Dual sector servo system for disk file with separate read and write heads Physics 31 Expired
US7211874B2 Magnetic random access memory array with free layer locking mechanism Physics 30 Expired
US7995425B2 Power control of TAMR element during read/write transition Physics 29 Active
US6449131B2 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof Emerging Cross-Sectional Technologies 29 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.