Method for selectively etching polysilicon to gate oxide using an insitu ozone photoresist strip
US5346586A · kind A · utility
51Cited by
7References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 23, 1992 |
| Grant date | Sep 13, 1994 |
| Priority date | — |
| Expiry date | Dec 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In semiconductor manufacture, a method of etching a polysilicon layer to a gate oxide in a semiconductor structure is provided. The method is performed insitu in a plasma etch chamber. Initially, an oxide hard mask is formed on the semiconductor structure by etching a deposited oxide layer through a photoresist mask. The photoresist mask is then stripped in the same etch chamber using a high pressure ozone plasma. With the photoresist mask stripped from the semiconductor structure, the polysilicon layer can be etched through the oxide hard mask to the gate oxide with a high etch selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.