Microwave energized deposition process with substrate temperature control for the fabrication of P-I-N photovoltaic devices
US5346853A · kind A · utility
70Cited by
12References
2Claims
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Key dates
| Filing date | Jan 21, 1994 |
| Grant date | Sep 13, 1994 |
| Priority date | — |
| Expiry date | Jan 21, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Substrate temperatures are maintained above 400.degree. C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400.degree. C. Maximum cell efficiency occurs for depositions carried out in the range of 400.degree.-500.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.