Turn-off power semiconductor device

US5349213A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventor

• Friedhelm Bauer · Suhr, CH

Key dates

• Filing date: Oct 16, 1992
• Grant date: Sep 20, 1994
• Expiry date: Oct 16, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/655

Abstract

To avoid peripheral current-density overshoots in a turn-off power semiconductor device, in particular an MOS-controlled thyristor MCT having a multiplicity of separate MCT cells ((M1, . . . , M3), the unit cells (here: MCT cells (M1, . . . , M3)) are combined in groups to form segments (SE) and are surrounded peripherally by peripheral short-circuit regions (10, 15) which are embedded in the semiconductor substrate (1) from the cathode side and are directly connected to the cathode contact (2). At the same time, the peripheral short-circuit regions (10) are of the same conductivity type as the anode-side emitter layer (8).