Antiblooming structure for solid-state image sensor

US5349215A · kind A · utility

Assignee

• EASTMAN KODAK COMPANY · US

Inventors

• Constantine N. Anagnostopoulos · Mendon, US
• Win-Chyi Chang · Penfield, US
• Eric G. Stevens · Rochester, US
• Georgia R. Torok · Fairport, US

Key dates

• Filing date: Jul 23, 1993
• Grant date: Sep 20, 1994
• Expiry date: Jul 23, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/158

Abstract

Solid-state image sensors, in general, comprise a photodetector for detecting radiation from the image and converting the radiation to charge carriers, and transfer means for carrying the charge carriers to an output circuit. One type of solid-state image sensor uses a CCD as both the photodetector and the transfer means. The solid-state image sensor generally includes a plurality of the CCD's arranged in spaced parallel relation to form an array. The image sensor of this disclosure utilizes only one antiblooming lateral overflow barrier. The excess signal charge of phase 1 flows into the preceding phase 2 and is saved. This eliminates the overflow barrier of phase 1 so that blooming protection is via the overflow barrier of the preceding phase 2. This results in an image sensor with blooming protection and increased charge capacity.