Semiconductor device
US5349238A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1992 |
| Grant date | Sep 20, 1994 |
| Priority date | — |
| Expiry date | Sep 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device comprising a lead frame which includes a metal layer forming an outer lead, a thin metal layer forming an inner lead, an intermediate layer held between the thick metal layer and the thin metal layer for forming a connection portion between the outer lead and the inner lead and a bump positioned at the extreme end of the lead frame, whereby making the lead frame as an electrode leading means by directly connecting the bump to each electrode of a semiconductor element, wherein the lead formed of the thick metal layer has a thickness of 30 to 300 .mu.m, the lead formed of the thin metal layer has a thickness of 10 to 50 .mu.m, and the bump has thickness of 5 to 50 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.