Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity
US5349596A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1993 |
| Grant date | Sep 20, 1994 |
| Priority date | — |
| Expiry date | Apr 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/347
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zon…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.