Etching method and etching apparatus therefor
US5352324A · kind A · utility
37Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1993 |
| Grant date | Oct 4, 1994 |
| Priority date | — |
| Expiry date | Oct 18, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an etching method and an apparatus for performing an etching by alternately and repeatedly switching an average thickness of an ion sheath and an average energy of etching ions between two different values. Since the etchant absorption to the surface of an article to be etched and the etching by ions are effectively performed, it is possible to reduce the influence of an aspect ratio on an etching depth, and hence to perform the etching with an equal depth even if the width of the opening is changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.