Method for the chemical vapor deposition of group IB and group VIIIB metal barrier layers
US5352656A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1992 |
| Grant date | Oct 4, 1994 |
| Priority date | — |
| Expiry date | Mar 17, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/737
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for applying a metal film barrier layer between a substrate and a superconductor coating or over a superconductivity coating using chemical vapor deposition in which low vapor pressure reactants are used, is disclosed, which comprises the steps of providing a substrate and a quantity of metal-bearing reagent and one or more reagents, placing the substrate within the furnace, introducing the metal-bearing reagent by a powder feeder means and then the reagents at different times into and reacting them in the furnace, resulting in the deposition first of a coating of metal onto the substrate and then of a coating consisting essentially of the superconducting reactant components onto the metal film; said reagents generally chosen to yield the group of oxide superconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.