Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
US5354708A · kind A · utility
5Cited by
3References
12Claims
0Family size
Inventors
Key dates
| Filing date | Jul 14, 1993 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | Jul 14, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/064
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.