Diamond shaped gate mesh for cellular MOS transistor array
US5355008A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1993 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | Nov 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cellular transistor structure is disclosed which incorporates a polysilicon gate mesh. In one embodiment, the silicon under the polysilicon is of an N-type while the exposed area not covered by the polysilicon is doped with a P dopant to form P-type source and drain regions. Metal strips are used to contact the rows of source and drain cells. By forming the openings in the polysilicon mesh to be in a diamond shape (i.e., having a long diagonal and a short diagonal), the source and drain metal strips, arranged in the direction of the short diagonals, can be made wider and shorter, thus reducing the on-resistance of the transistor without increasing the area of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.