Positive resist material
US5356753A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 12, 1992 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Nov 12, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/126
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive resists material for high energy-sensitive positive resists which can be developed in aqueous alkali solution, said material comprising (A) a polyhydroxystyrene resin wherein some hydroxyl groups are substituted by t-butoxycarbonyloxy groups, (B) a solution blocking agent, and (C) an onium salt, and being characterized in that said solution blocking agent contains at least one t-butoxycarbonyloxy group per molecule, said onium salt is bis(p-t-butylphenyl) iodinium trifluormethylsulfonate represented by the following formula (1): ##STR1## and the weight proportions of (A), (B), (C) are given by the relations: 0.07.ltoreq.B-.ltoreq.0.40, 0.005.ltoreq.C.ltoreq.0.15, 0.55.ltoreq.A, A+B+C=1. As the resist has low absorption at the exposure wavelength of a KrF exima laser, a fine pattern having vertical walls is easily formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.