Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer
US5357535A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1993 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Jan 6, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32316
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.