Patent · US Expired

Method for manufacturing a bipolar transistor in a substrate

US5358882A · kind A · utility

11Cited by

1References

8Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Emmerich Bertagnolli · Munich, DE
Helmut Klose · Munich, DE

Key dates

Filing date	Mar 15, 1993
Grant date	Oct 25, 1994
Priority date	—
Expiry date	Mar 15, 2013

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a bipolar transistor completely surrounded by an insulating trench in a substrate. Insulating regions at the surface of the substrate can be produced by depositing an SiO.sub.2 layer on the basis of thermal decomposition of TEOS and subsequent structuring of the SiO.sub.2 layer. The insulating regions can be employed as a self-aligning mask for the production of a collector terminal and of a substrate terminal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.