Formation of ruthenium oxide for integrated circuits
US5358889A · kind A · utility
34Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1993 |
| Grant date | Oct 25, 1994 |
| Priority date | — |
| Expiry date | Apr 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for forming a conductive layer of ruthenium oxide layer RuO.sub.2. The RuO.sub.2 layer is formed from a coating of a precursor solution comprising a ruthenium (III) nitrosyl salt,subsequent heat treatment, and annealing at low temperature. The resulting layer of a tetragonal phase of crystalline ruthenium oxide is suitable for formation thereon of a perovskite structure ferroelectric material for applications in ferroelectric non-volatile memory cells. The chloride free process is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.