Trench isolation with planar topography and method of fabrication
US5358891A · kind A · utility
35Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1993 |
| Grant date | Oct 25, 1994 |
| Priority date | — |
| Expiry date | Jun 29, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming and refilling a trench in a substrate. First a trench is formed in the substrate. The trench is then refilled with a conformal material. Next, a recess is etched into the top portion of the refilled trench. The recess is then refilled with a second material until the refilled recess and substrate are substantially planar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.