Chemical vapor deposition method of silicon dioxide film
US5360646A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 1, 1993 |
| Grant date | Nov 1, 1994 |
| Priority date | — |
| Expiry date | Sep 1, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45595
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition method that utilizes conventional CVD equipment to deposit silicon dioxide films is provided. The method is capable of producing excellent step coverage on substrates with steep step portions. Tetra-ethoxy-ortho-silicate, acetic-acid, and water are independently gasified by gasifiers and are fed into a reaction chamber. The mixed vapor is heated in the chamber to activate a chemical reaction so that high-fluidity tetra-hydroxy-silicon can be uniformly deposited on a semiconductor substrate containing step portions. Subsequently, two water molecules are detached from tetra-hydroxy-silicon in a dehydration process thereby forming silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.