Method to radiation harden the buried oxide in silicon-on-insulator structures
US5360752A · kind A · utility
39Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1993 |
| Grant date | Nov 1, 1994 |
| Priority date | — |
| Expiry date | Oct 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a radiation hardened SOI structure is disclosed. The buried oxide layer of an SOI structure is hardened prior to the bonding of a device wafer which forms the silicon portion of the silicon-on-insulator. The radiation hardening is done by implantation of recombination center-generating impurities. All the radiation hardening is done prior to the bonding of the device silicon layer and allows for radiation hardening of the buried oxide layer of an SOI structure without any damage to the silicon device layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.