Method for the making heteroepitaxial thin layers and electronic devices
US5360754A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1993 |
| Grant date | Nov 1, 1994 |
| Priority date | — |
| Expiry date | Apr 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3428
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to the field of monocrystalline thin layers deposited on a substrate having an identical or a different nature, from a vapor phase. On the substrate made of monocrystalline material A, a cavity is built, determined by one face of the substrate and one face of a layer made of a material D in such a way that there can be neither nucleation nor growth on the faces exposed to the vapor phase. The growth is done from a seed made of monocrystalline material B located between two faces of the substrate and of the layer. The seed made of monocrystalline material B may be of a nature different from that of the substrate (for example, substrate=silicon and material B=GaAs) and is made, for example, by MBE or MOCVD. The material C to be made to grow is different from the material B of the seed. The material C is, for example, InP and the growth is done by VPE.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.