Bonded wafer processing
US5362667A · kind A · utility
54Cited by
1References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1992 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Jul 28, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/92
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.