Method for producing a field effect transistor with a gate recess structure
US5362677A · kind A · utility
17Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1990 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Dec 14, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor has an active layer containing a multi-step recess that becomes narrower as it approaches the substrate. A gate electrode is produced at the deepest portion of the recess section. The transistor may be produced by successively selectively etching the active layer and an overlying semiconductor surface protection film to produce a multi-step configuration recess, depositing a gate electrode at the bottom of the recess, and depositing source and drain electrodes on the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.