Semiconductor distributed-feedback laser device
US5363399A · kind A · utility
13Cited by
7References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 18, 1992 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Nov 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/223
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A gain coupled distributed feedback semiconductor laser device includes regions with a predetermined period in an active layer or a cladding layer on the active layer in such a manner that a perturbation in the distribution of charge carriers injected into the active layer is produced which results in a perturbation in gain coefficient without increasing internal loss. The structure produces single-longitudinal-mode oscillation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.