Large area semiconductor wafers
US5363798A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1993 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Sep 29, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of synthesizing a large area, single crystalline, semiconductor wafer in which the semiconductor is grown on a substrate having a lower melting temperature and higher specific gravity than the overlying semiconductor. The substrate is disposed within an open container or holder having a drain plug. First, a very thin layer of semiconductor is grown on the substrate. Then, the temperature is raised to melt the substrate and anneal the very thin layer of semiconductor. Next, growth of the semiconductor film now floating on the molten substrate is resumed until the desired thickness is obtained. Then, the molten substrate is drained from the holder, the temperature lowered to room temperature, and the nascent large area semiconductor wafer removed from the holder. In an alternate procedure, the molten substrate is not drained from the holder, but the semiconductor is grown to a thickness sufficient to force misfit defects in the underlying substrate as the temperature is lowered and the substrate resolidifies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.