Photo-assisted chemical vapor deposition method
US5364667A · kind A · utility
483Cited by
11References
2Claims
0Family size
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Key dates
| Filing date | May 25, 1993 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | May 25, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/488
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a photo-CVD system, ultraviolet light is introduced into a reaction chamber from light emitting elements of ultraviolet light sources, through transparent bulb surfaces thereof, and through elongated light pipes in a sealed wall bounding the reaction chamber. This prevents molecules of reactant gas in the reaction chamber from reaching and being deposited on the transparent bulb surfaces, and thereby prevents buildup of such reactant molecules from occurring and impeding flow of ultraviolet light into the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.