Method of making a semiconductor device with buried electrode
US5364802A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1993 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Oct 1, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.