Tetsuo Asaba
25Patents
9h-index
28Co-inventors
71Inventor score
Filing activity: Jan 17, 1992 → Jan 13, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5383970A | Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practicing said method | Chemistry; Metallurgy | 61 | Expired |
| US7256381B2 | Driving an image sensor with reduced area and high image quality | Electricity | 50 | Expired |
| US5850242A | Recording head and recording apparatus and method of manufacturing same | Performing Operations; Transporting | 38 | Expired |
| US5534069A | Method of treating active material | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5569614A | Method of forming metal pattern including a schottky diode | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5776255A | Chemical vapor deposition apparatus | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5614439A | Method of making a planar wiring in an insulated groove using alkylaluminum hydride | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7414233B2 | Pixel circuit with surface doped region between multiple transfer transistors and image sensor including the same | Electricity | 13 | Active |
| US5527730A | Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7750281B2 | CMOS image sensor with current mirror | Electricity | 9 | Active |
| US6128052A | Semiconductor device applicable for liquid crystal display device, and process for its fabrication | Physics | 8 | Expired |
| US5547708A | Chemical vapor deposition method for forming a deposited film with the use of liquid raw material | Chemistry; Metallurgy | 7 | Expired |
| US5364802A | Method of making a semiconductor device with buried electrode | Electricity | 7 | Expired |
| US7521661B2 | Driving an image sensor with reduced area and high image quality | Electricity | 6 | Active |
| US5963812A | Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6156657A | Method of treating active material | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7508429B2 | Solid-state image-sensing device for averaging sub-sampled analog signals and method of driving the same | Electricity | 5 | Active |
| US7679112B2 | Color image sensors having pixels with cyan-type and yellow-type color characteristics therein | Electricity | 4 | Active |
| US7888715B2 | Active pixel sensor with coupled gate transfer transistor | Electricity | 3 | Active |
| US5534453A | Method of manufacturing titanium silicide containing semiconductors | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5975685A | Ink jet recording head having an oriented p-n junction diode, and recording apparatus using the head | Performing Operations; Transporting | 3 | Expired |
| US7521659B2 | Driving an image sensor with reduced area and high image quality | Electricity | 2 | Active |
| US5580808A | Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7652707B2 | Pixel circuit with reduced wiring | Electricity | 1 | Active |
| US5306934A | Semiconductor device with buried electrode | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.