Semiconductor device and method of making it
US5365078A · kind A · utility
6Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1993 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Oct 4, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a semiconductor substrate and channel and electron supply layers epitaxially grown on the semiconductor substrate. Source, drain, and gate electrodes are disposed on the electron supply layer. At least the gate electrode and the electron supply layer are structured such that an electron gas within the channel layer is one-dimensional to prevent scattering of electrons in the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.