Device fabrication process
US5366851A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1993 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Sep 16, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The sensitivity and dry etching pattern control of chemically amplified resists used in the production of devices such as electronic devices is substantially enhanced while image quality is improved through use of a specific expedient. In particular, the resist material after coating on the device substrate, is treated, e.g., heated to sufficiently high temperatures, to remove a portion of the protective groups on the polymeric component of the resist. Generally, when removal up to approximately 90% of the protective groups for substituents such as t-butoxycarboxyl is effected through this procedure, sensitivities as good as 10 mJ/cm.sup.2 for an X-ray exposure (.lambda.=14.ANG.) have been achieved, and both the image quality and dry etching pattern control are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.